Tokyo and Kawasaki, Japan, October 10, 2008 – Fujitsu Limited and Fujitsu Laboratories Ltd. today announced the development of a new type of gallium nitride (GaN) -based high electron mobility transistor (HEMT) that features a new structure ideal for use in amplifiers for microwave and millimeter-wave transmissions, frequency ranges for which usage is expected to grow. In a technological first, a novel transistor structure was developed that achieves high output of over 100 watts and enables power to be cut when the transistor is in standby mode. This technological advance will contribute to higher output and lower power consumption in microwave and millimeter-wave transmission amplifiers for high-speed wireless communications.

Tokyo, September 26, 2008 – Fujitsu Limited announced today that it has been selected by NTT DOCOMO, Inc. to be a supplier of core network systems for the carrier's next-generation Super 3G high-speed wireless communications network.

Tokyo, September 24, 2008 – The Fujitsu Group today announced the launch of a new menu of IT outsourcing services, Global Infrastructure Services, with five categories of offerings designed to raise the efficiency and competitiveness of customers' international business operations. The services will be rolled out in stages on a worldwide basis in the second half of the fiscal year under a new customer management structure.

Tokyo, August 4, 2008 – As a result of the earthquake that struck the northern Iwate region of Japan after midnight on July 24, 2008, a portion of the semiconductor manufacturing equipment at Fujitsu Microelectronics' Iwate Plant was damaged.